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DISCRETE SEMICONDUCTORS
DATA SHEET
BU506; BU506D
Silicon diffused power transistors
Product specification
Supersedes data of December 1991
File under Discrete Semiconductors, SC06
1997 Aug 13
Philips Semiconductors
Product specification
Silicon diffused power transistors
DESCRIPTION
High-voltage, high-speed, switching
NPN power transistor in a TO-220AB
package. The BU506D has an
integrated efficiency diode.
BU506; BU506D
2
2
APPLICATIONS
•
Horizontal deflection circuits of
colour television receivers
•
Line-operated switch-mode
applications.
PINNING
PIN
1
2
3
DESCRIPTION
base
collector; connected to
mounting base
emitter
Fig.1 Simplified outline (TO-220AB) and symbols.
MBK106
1
MBB008
1
3
MBB077
3
1 2 3
a. BU506.
b. BU506D.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
V
CEsat
V
F
I
Csat
I
C
I
CM
P
tot
t
f
PARAMETER
collector-emitter peak voltage
collector-emitter voltage
collector-emitter saturation
voltage
diode forward voltage (BU506D)
collector saturation current
collector current (DC)
collector current (peak value)
total power dissipation
fall time
see Fig.2
see Fig.2
T
mb
≤
25
°C;
see Fig.3
inductive load; see Fig.9
V
BE
= 0
open base
I
C
= 3 A; I
B
= 1.33 A; see Fig.6
I
F
= 3 A; see Fig.10
CONDITIONS
−
−
−
1.5
−
−
−
−
0.7
TYP.
MAX.
1500
700
1
−
3
5
8
100
−
V
V
V
V
A
A
A
W
µs
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
PARAMETER
thermal resistance from junction to mounting base
VALUE
1.25
UNIT
K/W
1997 Aug 13
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CESM
V
CEO
I
Csat
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
PARAMETER
collector-emitter peak voltage
collector-emitter voltage
collector saturation current
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
T
mb
≤
25
°C;
see Fig.3
see Fig.2
see Fig.2
V
BE
= 0
open base
CONDITIONS
−
−
−
−
−
−
−
−
−65
−
BU506; BU506D
MIN.
MAX.
1500
700
3
5
8
3
5
100
+150
150
V
V
A
A
A
A
A
W
UNIT
°C
°C
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
CEOsust
V
CEsat
V
BEsat
V
F
I
CES
PARAMETER
collector-emitter sustaining voltage
collector-emitter saturation voltage
base-emitter saturation voltage
diode forward voltage (BU506D)
collector-emitter cut-off current
CONDITIONS
see Figs 4 and 5
I
C
= 3 A; I
B
= 1.33 A; see Fig.6
I
C
= 3 A; I
B
= 1.33 A; see Fig.7
I
F
= 3 A; see Fig.10
V
CE
= V
CESmax
; V
BE
= 0; note 1
V
CE
= V
CESmax
; V
BE
= 0;
T
j
= 125
°C;
note 1
I
EBO
h
FE
emitter-base cut-off current
DC current gain
V
EB
= 6 V; I
C
= 0
V
CE
= 5 V; I
C
= 100 mA;
see Fig.8
MIN.
700
−
−
−
−
−
−
6
TYP.
−
−
−
1.5
−
−
−
13
MAX.
−
1
1.3
2.2
0.5
1
10
30
UNIT
V
V
V
V
mA
mA
mA
Switching times in horizontal deflection circuit
(see Fig.9)
t
s
t
f
Note
1. Measured with a half-sinewave voltage (curve tracer).
storage time
fall time
I
CM
= 3 A; I
B(end)
= 1A;
L
B
= 12
µH
I
CM
= 3 A; I
B(end)
= 1A;
L
B
= 12
µH
−
−
6.5
0.7
−
−
µs
µs
1997 Aug 13
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506; BU506D
handbook, full pagewidth
10
2
IC
(A)
MGB923
10
ICM max
IC max
II
1
10
−1
I
10
−2
10
−3
10
−4
1
10
10
2
10
3
VCE (V)
10
4
T
mb
= 25
°C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.2 Forward bias SOAR.
1997 Aug 13
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506; BU506D
MGD283
120
handbook, halfpage
Ptot max
(%)
80
handbook, halfpage
+
50 V
100 to 200
Ω
L
horizontal
oscilloscope
40
300
Ω
vertical
1
Ω
MGE252
6V
30 to 60 Hz
0
0
50
100
Tmb (
o
C)
150
Fig.4
Fig.3 Power derating curve.
Test circuit for collector-emitter
sustaining voltage.
handbook, halfpage
10
MGB869
VCEsat
(V)
I
halfpage
handbook,
C
(mA)
250
200
1
MGE239
(1)
(2)
(3)
100
0
min
VCEOsust
VCE (V)
10
−1
10
−2
(1) I
C
= 1 A.
(2) I
C
= 2 A.
(3) I
C
= 3 A.
T
mb
= 25
°C.
10
−1
1
IB (A)
10
Fig.5
Oscilloscope display for collector-emitter
sustaining voltage.
Fig.6
Collector-emitter saturation voltage as a
function of base current; typical values.
1997 Aug 13
4

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