c2482.pdf

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C2482
NPN Epitaxial Silicon Transistor
TO – 92L
Features
Collection Dissipation : P
C
(max) = 900mW
Collector-Emitter Voltage : V
CEO
= 300V
Absolute Maximum Ratings (TA=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Rating
300
300
7
100
900
150
-55~+150
Unit
V
V
V
mA
mW
o
1
C
o
C
1. Emitter
2. Collector
3. Base
Electrical Characteristics (TA=25
o
C)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Test Conditions
I
C
= 100£g A, I
E
= 0
I
C
= 3mA, I
B
= 0
I
E
= 100£g A, I
C
= 0
V
CB
= 240V, I
E
= 0
V
CE
= 220V, I
B
= 0
V
EB
= 7V, I
C
= 0
V
CE
= 10V, I
C
= 20mA
I
C
= 10mA, I
B
= 1mA
I
C
= 10mA, I
B
= 1mA
V
CE
= 10V, I
C
= 20mA
f=30MHz
50
MHz
30
Min
300
300
7
1
5
1
150
1
1
V
V
Max
Unit
V
V
V
µA
µA
µA
h
FE
CLASSIFICATION
Classification
h
FE
O
30-90
Y
90-150
Elite Enterprises (H.K.) Co., Ltd.
Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.
Tel: (852) 2723-3122 Fax: (852) 2723-3990
Email:
info@elite-ent.com.hk
Part No.: C2482
Page: 1 / 1

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